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Industry Insights: UMS GaN on SiC mmWave PA Process AWR
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Description: n this video David Vye discusses with Eric LeClerc of United Monolithic Semiconductors (UMS) the new UMS GH25 (0.25 µm gate length), More » |
Description: n this video David Vye discusses with Eric LeClerc of United Monolithic Semiconductors (UMS) the new UMS GH25 (0.25 µm gate length), GaN on SiC process for mmWave power amplifiers (PA) targeting new communication and defense systems.
NI AWR website: https://www.awr.com/solutions/applications/amplifiers
UMS website: https://www.ums-gaas.com/ « Less |