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Design Flow and Simulation of Multi-Technology RF Modules
AWR
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| Keywords: multi-technology, rf modules, microwave office, ni, awr, simulation rf, PCB, IC, GaAS, SiGe, RF CMOS, SOI, CMOS, PA, power amplifier |
| Description: Multi-technology-based module and advanced packaged PA design both incorporate different integrated circuit (IC) and printed circuit More » |
Description: Multi-technology-based module and advanced packaged PA design both incorporate different integrated circuit (IC) and printed circuit board (PCB) process technologies, often leveraging different design tools. To develop smaller wireless devices with optimum performance, it is common for front-end module manufacturers to integrate gallium arsenide (GaAs), silicon germanium (SiGe), or radio-frequency complementary metal-oxide semiconductor (RF CMOS) power amplifiers (PAs), CMOS or silicon-on-insulator (SOI) switches, and acoustic filters—all mounted on a single laminate package. Today’s wireless integrated devices require concurrent chip/package co-design for successful implementation.
Presented by: Shane Coffman, AWR Group, NI « Less |
