MoSys Acquires Prism Circuits, Inc.

For those unable to participate during the live broadcast, a replay will be available shortly after the call and will be available on MoSys’ website for approximately 3 days. The replay number is 888-286-8010 with a pass code of 33878779. International callers should dial 617-801-6888 and enter the same pass code at the prompt.

Forward-Looking Statements

This press release may contain “forward-looking statements” about MoSys, including, without limitation, expected benefits and costs of the acquisition of Prism Circuits, benefits and performance expected from use of MoSys’ embedded memory technologies, MoSys’ execution and results, improving operational efficiencies, projections of earnings, revenues, costs, expenses, margins or other financial terms, growth of the business and our market and future business prospects, strategies, objectives or market penetration and any statements of expectation or belief.

Forward-looking statements are based on certain assumptions and expectations of future events that are subject to risks and uncertainties. Such statements are made in reliance upon the safe harbor provisions of Section 27A of the Securities Act of 1933 and Section 21E of the Securities Exchange Act of 1934. Actual results and trends may differ materially from historical results or those projected in any such forward-looking statements depending on a variety of factors. These factors include, but are not limited to:

  • the potential impact the acquisition of Prism Circuits will have on MoSys;
  • customer acceptance of MoSys’ embedded memory proprietary technologies and recently acquired interface IP;
  • difficulties in integrating the operations of the newly acquired Prism Circuits business and achieving strategic objectives;
  • difficulties in retaining the newly hired employees from Prism Circuits;
  • customer loss and business disruption of the combined business;
  • difficulties and delays in the further development, production, testing and marketing of acquired technologies;
  • the level of intellectual property protection provided by MoSys’ patents;
  • the expenses and other consequences of litigation, including intellectual property infringement litigation, to which MoSys may be or may become a party from time to time;
  • the vigor and growth of markets served by licensees and customers and of the operations of MoSys and Prism Circuits;
  • the short operating history of Prism Circuits prior to the acquisition by MoSys;
  • the lack of experience in conducting and operating the newly acquired technologies and operations of Prism Circuits in combination with the historical proprietary technologies and operations of MoSys;

and other risks identified in MoSys’ most recent reports on forms 10Q and 10-K filed with the Securities and Exchange Commission, as well as other reports that MoSys files from time to time with the Securities and Exchange Commission. MoSys undertakes no obligation to update publicly any forward-looking statement for any reason, except as required by law, even as new information becomes available or other events occur in the future.

About Prism Circuits, Inc.

Prism Circuits, Inc. is a leading supplier of high quality parallel and serial interconnect IP. Prism Circuit's silicon proven portfolio includes DDR3/2 Combo PHYs as well as SerDes IP that support datarates from SGMII (1.25Gbps) to CEI-11 (11.3Gbps). These also include XAUI (3.125Gbps and 6.25Gbps), USB 3.0 (5Gbps), PCI Express Gen1 (2.5Gbps) and Gen2 (5.0Gbps), SATA I, II, and III, and 10G KR. More information is available on Prism Circuit’s website at http://www.prismcircuits.com

About MoSys, Inc.

Founded in 1991, MoSys develops, markets and licenses innovative embedded memory intellectual property (IP) technologies for advanced systems-on-chips (SoCs) used in a variety of home entertainment, mobile consumer, networking and storage applications. MoSys' patented 1T-SRAM and 1T-FLASH technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. MoSys' embedded memory IP has been included in more than 175 million devices demonstrating silicon-proven manufacturability in a wide range of processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-FLASH(TM) is a trademark of MoSys, Inc.



Contact:

MoSys, Inc.
Jim Sullivan, CFO, +1 408-731-1800
Email Contact
or
Shelton Group, Investor Relations
Beverly Twing, +1 972-239-5119 ext. 126
Sr. Acct. Manager
Email Contact



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