Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers, EVs, and Mobile Applications at CES 2025
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Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers, EVs, and Mobile Applications at CES 2025

TORRANCE, Calif., Dec. 05, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will showcase several breakthroughs for AI data centers, EVs, and mobile technology at CES 2025 (Tech West, Venetian suite 29-335, January 7th - 10th). Navitas was recently acknowledged as the Top 500 fastest-growing technology company, by Deloitte’s  Technology Fast 500™, for the third consecutive year.

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The “Planet Navitas” suite will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors. These technologies are designed for high growth markets that demand the highest efficiency and power density, such as AI data centers, electric vehicles (EVs), and mobile. Additionally, Navitas will demonstrate how GaN and SiC technologies contribute to reducing carbon-footprint, with the potential to save over 6,000 megatons of CO2 per year by 2050.

Major technology and system breakthroughs include:

CES 2025 takes place in Las Vegas, NV from January 7th – 10th. The “Planet Navitas” suite is located in Tech West at the Venetian, suite 29-335. 

To schedule a press meeting with Navitas at CES, please book here (via Calendly)
To schedule an IR meeting, please book here.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating  10 years of power innovation founded in 2014.  GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary  GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI datacenters, EV, solar, energy storage, home appliance / industrial, mobile and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only  20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be  CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com

Stephen Oliver, VP Investor Relations
ir@navitassemi.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/e3889989-7b5b-400d-a033-f2870c9cc9c4


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Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers, EVs, and Mobile Applications at CES 2025

Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced it will showcase several breakthroughs for AI data centers, EVs, and mobile technology at CES 2025 (Tech West, Venetian suite 29-335, January 7th - 10th).