KAWASAKI, Japan — (BUSINESS WIRE) — January 25, 2022 — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “ MG600Q2YMS3,” with a voltage rating of 1200V and drain current rating of 600A; and “ MG400V2YMS3,” with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.
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Toshiba: 1200V and 1700V silicon carbide (SiC) MOSFET modules that contribute to smaller, more efficient industrial equipment. (Graphic: Business Wire)
The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.
Applications
- Inverters and converters for railway vehicles
- Renewable energy power generation systems
- Motor control equipment
- High frequency DC-DC converter
Features
- Mounting compatible with Si IGBT modules
- Lower loss than Si IGBT modules
MG600Q2YMS3
VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C
MG400V2YMS3
VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
- Built-in NTC Thermistor
Main Specifications
(unless otherwise specified, @Tc=25°C) |
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Part number |
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Package |
2-153A1A |
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Absolute maximum ratings |
Drain-source voltage VDSS (V) |
1200 |
1700 |
|
Gate-source voltage VGSS (V) |
+25/-10 |
+25/-10 |
||
Drain current (DC) ID (A) |
600 |
400 |
||
Drain current (pulsed) IDP (A) |
1200 |
800 |
||
Channel temperature Tch (°C) |
150 |
150 |
||
Isolation voltage Visol (Vrms) |
4000 |
4000 |
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Electrical characteristics |
Drain-source on-voltage (sense) VDS(on)sense typ. (V) |
@VGS =+20V, Tch＝25°C |
0.9 @ID＝600A |
0.8 @ID＝400A |
Source-drain on-voltage (sense) VSD(on)sense typ. (V) |
@VGS =+20V, Tch＝25°C |
0.8 @IS＝600A |
0.8 @IS＝400A |
|
Source-drain off-voltage (sense) VSD(off)sense typ. (V) |
@VGS =-6V, Tch＝25°C |
1.6 @IS＝600A |
1.6 @IS＝400A |
|
Turn-on switching loss Eon typ. (mJ) Eon typ. (mJ) |
@Tch=150°C |
25 @ VDS=600V, ID=600A |
28 @VDS=900V, ID=400A |
|
Turn-off switching loss Eoff typ. (mJ) Eoff typ. (mJ) |
@Tch=150°C |
28 @ VDS=600V, ID=600A |
27 @VDS=900V, ID=400A |
|
Thermistor characteristics |
Rated NTC resistance R typ. (kΩ) |
5.0 |
5.0 |
|
NTC B value B typ. (K) |
�nbsp;TNTC=25 - 150°C |
3375 |
3375 |
|
Follow the links below for more on the new products.
MG600Q2YMS3
MG400V2YMS3
Follow the link for more on Toshiba’s SiC Power Devices.
SiC Power Devices
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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company's 22,000 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales now surpassing 710-billion yen (US$6.5 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
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