Integra’s first 100V RF GaN product, the IGN1011S3600, delivers breakthrough output power performance of 3.6 kiloWatts at 70% efficiency for next generation avionic systems
EL SEGUNDO, Calif. — (BUSINESS WIRE) — July 13, 2021 — Integra, a leading provider of innovative RF and Microwave Power solutions that help make a safer and more connected world, today introduced the industry’s first 100V RF GaN/SiC technology targeting a wide-range of applications including radar, avionics, electronic warfare, industrial, scientific and medical systems. Operating at 100V, this technology shatters RF power performance barriers by achieving 3.6 kiloWatts (kW) of output power in a single GaN transistor. Integra’s 100V GaN gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50V/65V GaN technology. Customers ultimately benefit with a smaller system footprint and lower system cost.
Suja Ramnath, Integra’s President and CEO, said, “Integra’s 100V RF GaN technology signifies a major milestone in the high-power market. This innovative technology removes the barriers limiting system performance today and allows new architectures previously not possible. We are excited that this disruptive technology will enable our customers to deliver a new generation of high-performance, multi-kiloWatt RF power solutions while reducing their design cycle time and product costs.”
Dr. Mahesh Kumar, an Aerospace and Defense radar systems architect and technology executive, said, “Integra’s first to market 100V RF GaN technology will completely redefine what’s possible for high power RF systems.” By delivering approximately two times the power compared to a 50V GaN transistor in a single package, it will eliminate a significant number of combiners and associated electronic circuitry, resulting in lower system volume, weight and cost, and higher system efficiency.
Integra’s first 100V RF GaN product is the IGN1011S3600, designed specifically for avionics applications. The IGN1011S3600 delivers an industry leading 3.6 kW of output power with 19dB of gain and 70% efficiency. The IGN1011S3600, based on Integra’s 100V RF GaN, is a compelling solution for programs that require size, weight, power and cost (SWAP-C) improvements. The IGN1011S3600 100V RF GaN/SiC is available for sampling to qualified customers.
Part Number |
IGN1011S3600 |
Frequency Range |
1030-1090 MHz |
Output Power |
3600W |
Efficiency |
70% |
Large Signal Gain |
19 dB |
Drain Bias |
100V |
ABOUT INTEGRA TECHNOLOGIES, INC.
Founded in 1997, Integra is a leading innovator of RF and Microwave high power semiconductor and amplifier pallet solutions for mission-critical applications, including state-of-the-art radar, electronic warfare, and advanced communications systems. For more information visit www.integratech.com.
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Contact:
Angie Callau
Integra Technologies Inc
acallau@integratech.com
310-606-0855 x141