-- Reduced on-resistance from use of a small low-resistance package

TOKYO — (BUSINESS WIRE) — April 11, 2018 — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released two new MOSFETs “TPHR7904PB” and “TPH1R104PB” housed in the small low-resistance SOP Advance (WF) package, as new additions to the automotive 40V N-channel power MOSFET series. Mass production starts today.

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Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide low on-resistance and thus help reduce conduction loss. The U-MOS IX-H design also lowers switching noise compared with Toshiba’s previous design (U-MOS IV), helping to reduce EMI (Electromagnetic Interference).

The SOP Advance (WF) package adopts a wettable flank terminal structure, which enables AOI (Automated Optical Inspection) after soldering.

Applications

• Electric power steering (EPS)
• Load switches
• Electric pumps

Features

• Provides a maximum on-resistance, R_DS(ON)max, of 0.79 mΩ from the use of the U-MOS IX-H process and the SOP Advance(WF) package.
• Low-noise characteristics reduce electromagnetic interference (EMI).
• Available in a small low-resistance package with a wettable flank terminal structure.

Main Specifications

(Unless otherwise specified, @Ta=25°C)

Part Number

Drain-Source voltage VDSS (V)

Drain current (DC) ID (A)

Drain-Source on-resistance RDS(ON) max.(mΩ)

Built-in Zener Diode between Gate-Source

Series

@V GS =6V

@V GS =10V

TPH1R104PB

40

120

1.96

1.14

No

U-MOS IX

TPHR7904PB

150

1.3

0.79

No

U-MOS IX

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