To assure scalability in the RH850/E2x Series, in addition to the 28nm flash memory MCU, Renesas has also launched a 40nm process MCU featuring (1) and (3) described above. Samples of this MCU are available now. Samples of both 28nm and 40nm MCUs from RH850/E2x are scheduled to be available from March 2018.
(Note 1) As of today compared to published data from other companies, according to Renesas research.
(Note 2) MIPS (Million Instructions Per Second): An expression of the processing power of a computer.
About Renesas’ Metal-Oxide-Nitride-Oxide-Silicon (MONOS) embedded flash technology
MONOS is a structure in which each transistor in the flash cell consists of three layers—oxide, nitride, and oxide—on a silicon base, with a metal control gate at the top. Renesas has accumulated more than two decades of experience in the use of MONOS flash memory technology by providing MCUs for IC cards. Based on the track record in MONOS technology, Renesas successfully extended the technology by developing a split-gate (SG) structure suitable for MCU internal flash memory. The new “SG-MONOS” –type flash memory realizes MCUs with high reliability, high speed and low power consumption.
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About Renesas Electronics Corporation
Renesas Electronics Corporation ( TSE: 6723) delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live—securely and safely. A global leader in microcontrollers, analog, power and SoC products and integrated platforms, Renesas provides the expertise, quality, and comprehensive solutions for a broad range of Automotive, Industrial, Home Electronics, Office Automation and Information Communication Technology applications to help shape a limitless future. Learn more at renesas.com.
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