TOKYO — (BUSINESS WIRE) — March 26, 2018 — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.
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Toshiba: A dual MOSFET "SSM6N813R" with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs. (Photo: Business Wire)
A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.
Applications
- Automotive headlight LED driver
Features
- Small package
- High ESD protection
- Low RDS(ON)
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Main Specifications |
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(@Ta=25℃) |
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Items
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SSM6N813R | |||||
| Absolute maximum ratings |
Drain-source voltage
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100 | ||||
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Gate-source voltage
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+/-20 |
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Drain current
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3.5 | |||||
| Electrical Characteristics |
Drain-source on-resistance
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V GS =10V | 112 | |||
| V GS =4.5V | 154 | |||||
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Input capacitance
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242 | |||||
| Package | TSOP6F | 2.9mm×2.8mm; t=0.8mm | ||||
