TI expands GaN power portfolio with the industry's smallest and fastest GaN drivers
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TI expands GaN power portfolio with the industry's smallest and fastest GaN drivers

Two new FET drivers benefit nanosecond LIDAR applications and 50-MHz DC/DC converters

DALLAS, March 5, 2018 — (PRNewswire) — Expanding on its industry-leading gallium nitride (GaN) power portfolio, Texas Instruments (TI) (NASDAQ: TXN) today announced two new high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such as light detection and ranging (LIDAR) and 5G radio-frequency (RF) envelope tracking. The LMG1020 and LMG1210 can deliver switching frequencies of 50 MHz while improving efficiency and enabling five times smaller solution sizes previously not possible with silicon MOSFETs. For more information, see www.ti.com/lmg1020-pr and www.ti.com/lmg1210-pr.

Two new FET drivers benefit nanosecond LIDAR applications and 50-MHz DC/DC converters

With an industry-best drive speed as well as a minimum pulse width of 1 ns, the LMG1020 60-MHz low-side GaN driver enables high-accuracy lasers in industrial LIDAR applications. The small wafer-level chip-scale (WCSP) package of only 0.8 mm by 1.2 mm helps minimize gate-loop parasitics and losses, further boosting efficiency.

The LMG1210 is a 50-MHz half-bridge driver designed for GaN FETs up to 200 V. The device's adjustable dead time control feature is designed to improve efficiency by as much as 5 percent in high-speed DC/DC converters, motor drives, Class-D audio amplifiers as well as other power-conversion applications. Designers can achieve high system-noise immunity with the industry's highest common-mode transient immunity (CMTI) of more than 300 V/ns.

Key features and benefits of the LMG1020 and LMG1210

TI's GaN advantage
The LMG1020 and LMG1210 are the latest additions to the industry's largest GaN power portfolio, ranging from 200-V drivers to 80-V and 600-V power stages. With over 10 million hours of GaN process reliability testing, TI is addressing the need for proven and ready-to-use solutions through reliable GaN products, bringing decades of silicon manufacturing expertise and advanced device-development talent to GaN technology.

Visit TI at APEC
TI is showcasing its extensive GaN portfolio and enabling GaN technology in booth No. 501 at the Applied Power Electronics Conference (APEC) in San Antonio, Texas, March 4-8, 2018.

Tools and support to speed design
Designers can quickly and easily evaluate these new devices with the LMG1020EVM-006 and LMG1210EVM-012 evaluation modules and SPICE models. Engineers can jump-start their GaN designs using the Nanosecond Laser Driver Reference Design for LIDAR and the Multi-megahertz GaN Power Stage Reference Design for High-Speed DC/DC Converters.

Package, pricing and availability
Prototype samples of the LMG1020 and LMG1210 are now available in the TI store and through the company's authorized distribution network. The LMG1020 comes in a WCSP package and is priced at US$1.79 in 1,000-unit quantities, while the LMG1210 comes in a quad flat no-lead (QFN) package and is priced at US$2.19 in 1,000-unit quantities.

Additional resources

About Texas Instruments
Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog integrated circuits (ICs) and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping approximately 100,000 customers transform the future, today. Learn more at www.ti.com.

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TI E2E is a trademark of Texas Instruments. All other trademarks belong to their respective owners.

 

Texas Instruments Logo. (PRNewsfoto/Texas Instruments)

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