GaAs MMIC Amplifier Boasts up to 42 dBm of Peak Power and 43 % Power Added Efficiency
LOWELL, Mass. — (BUSINESS WIRE) — July 23, 2014 — M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced a new high power MMIC amplifier ideal for X-Band communication and radar applications.
The combination of high power, high gain and excellent power added efficiency performance, along with versatile biasing options makes the device ideal for a wide range of X-band pulsed applications such as marine, weather and surface-movement radar, as well as perimeter security and communication links. (Photo: Business Wire)
The MAAP-015036, a two stage 8.5 – 10.5 GHz GaAs MMIC power amplifier, has a saturated pulsed output power of 42 dBm, a large signal gain of 17 dB and a typical 43 % power added efficiency. The power amplifier can be biased using a direct gate voltage or using an on-chip gate bias circuit. Furthermore, the device offers dual sided bias architecture for optimum flexibility in assembly and board design.
“The MAAP-015036 is our highest power amplifier in our family of new, high efficiency GaAs MMIC X-Band power amplifiers,” said Paul Beasly, Product Manager. “The combination of high power, high gain and excellent power added efficiency performance, along with versatile biasing options makes the device ideal for a wide range of X-band pulsed applications such as marine, weather and surface-movement radar, as well as perimeter security and communication links”.
The table below outlines typical performance:
| Parameters | Units | MAAP-015036 | ||||||||
| Frequency | GHz | 8.5-10.5 | ||||||||
| Saturated Output Power | dBm | 42 | ||||||||
| PAE | % | 43 | ||||||||
| Small Signal Gain | dB | 17 | ||||||||
| Bias Voltage | V | 8.0 | ||||||||
