KAWASAKI, Japan — (BUSINESS WIRE) — August 30, 2023 — Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the "TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest[1] 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.
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Toshiba: 3rd generation SiC MOSFETs for industrial equipment with four-pin package that reduces switching loss. (Graphic: Business Wire)
The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%[2], compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.
A reference design for a three-phase inverter using SiC MOSFETs is published online.
Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.
Notes:
[1] As of August 2023.
[2] As of August 2023, values measured by Toshiba (test condition: VDD=800V, VGG=+18V/0V, ID=20A, RG=4.7Ω, L=100μH, Ta=25°C)
Applications
- Switching power supplies (servers, data centers, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
Features
-
Four-pins TO-247-4L(X) package:
Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive - 3rd generation SiC MOSFETs
- Low drain-source On-resistance x gate-drain charge
- Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)
Main Specifications
(Ta=25°C unless otherwise specified) |
||||||||||||
Part number |
Package |
Absolute maximum ratings |
Electrical characteristics |
Sample Check & Availability |
||||||||
Drain- source voltage VDSS (V) |
Gate- source voltage VGSS (V) |
Drain current (DC) ID (A) |
Drain- source On- resistance RDS(ON) (mΩ) |
Gate threshold voltage Vth (V) |
Total gate charge Qg (nC) |
Gate- drain charge Qgd (nC) |
Input capacitance Ciss (pF) |
Diode forward voltage VDSF (V) |
||||
Tc=25°C |
VGS=18V |
VDS=10V |
VGS=18V |
VGS=18V |
typ. |
Test condition VDS (V) |
VGS=-5V |
|||||
typ. |
typ. |
typ. |
typ. |
|||||||||
TO-247-4L(X) |
1200 |
-10 to 25 |
100 |
15 |
3.0 to 5.0 |
158 |
23 |
6000 |
800 |
-1.35 |
||
60 |
30 |
82 |
13 |
2925 |
||||||||
40 |
45 |
57 |
8.9 |
1969 |
||||||||
36 |
60 |
46 |
7.8 |
1530 |
||||||||
20 |
140 |
24 |
4.2 |
691 |
||||||||
650 |
100 |
15 |
128 |
19 |
4850 |
400 |
||||||
58 |
27 |
65 |
10 |
2288 |
||||||||
40 |
48 |
41 |
6.2 |
1362 |
||||||||
30 |
83 |
28 |
3.9 |
873 |
||||||||
20 |
107 |
21 |
2.3 |
600 |