- The lineup covers 1200V and 650V products -

KAWASAKI, Japan — (BUSINESS WIRE) — August 29, 2022 — Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs^[1][2] that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.

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Toshiba: 3rd generation SiC MOSFETs "TWxxxNxxxC Series" (Graphic: Business Wire)

The new products reduce on-resistance per unit area (R_DS(ON)A) by about 43%^[3], allowing the drain-source on-resistance * gate-drain charge (R_DS(ON)*Q_gd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%^[4]. This cuts the switching loss by about 20%^[5], and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.

Toshiba will continue to expand its lineup of power devices and to enhance its production facilities, and aims to realize a carbon-free economy by providing high-performance power devices that are easy to use.

Notes:
[1] Toshiba has developed a device structure that reduces on-resistance per unit area (R_DS(ON)A) by using a structure with built-in schottky barrier diode developed for the 2nd generation SiC MOSFETs, and also reduces feedback capacitance in the JFET region.
[2] MOSFET: metal-oxide-semiconductor field-effect transistor
[3] Comparison of the new 1200V SiC MOSFETs when R_DS(ON)A is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[4] Comparison of the new 1200V SiC MOSFETs when R_DS(ON)*Q_gd is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[5] Comparison of the new 1200V SiC MOSFETs and the 2nd generation SiC MOSFETs. Toshiba survey.

Applications
・Switching power supplies (servers, data center, communications equipment, etc.)
・EV charging stations
・Photovoltaic inverters
・Uninterruptible power supplies (UPS)

Features
・Low on-resistance per unit area (R_DS(ON)A)
・Low drain-source on-resistance * gate-drain charge (R_DS(ON)*Q_gd)
・Low diode forward voltage: V_DSF= -1.35V (typ.) @V_GS= -5V