- Expanding line-up of U-MOS X-H power MOSFET series -
TOKYO — (BUSINESS WIRE) — March 29, 2020 — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.
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Toshiba: 80V N-channel power MOSFETs “U-MOS X-H series” (Photo: Business Wire)
The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today.
Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS VIII-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics[1] has also been improved[2] by optimizing device structure. As a result, the new products feature industry’s lowest[3] power dissipation.
Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.
Applications
- Switching power supplies (High efficiency AC-DC converters, DC-DC converters, etc.)
- Motor control equipment (Motor drive, etc.)
Features
- The industry’s lowest[3] power dissipation (by improving the trade-off between On-resistance and gate charge characteristic[2])
-
Industry’s lowest level[3] On-resistance:
RDS(ON)=2.43mΩ (max) @VGS=10V (TPH2R40QM)
RDS(ON)=19mΩ (max) @VGS=10V (TPN19008QM) - High channel temperature rating : Tch=175℃
Main Specifications
(Unless otherwise specified, @Ta=25℃) |
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Part number |
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Absolute Maximum ratings |
Drain-source voltage VDSS (V) |
80 |
80 |
|
Drain current (DC) ID (A) |
@Tc=25℃ |
120 |
34 |
|
Channel temperature Tch (℃) |
175 |
175 |
||
Electrical characteristics |
Drain-source On-resistance RDS(ON) max (mΩ) |
@VGS=10V |
2.43 |
19 |
@VGS=6V |
3.5 |
28 |
||
Total gate charge (gate-source plus gate-drain) Qg typ. (nC) |
87 |
16 |
||
Gate switch charge Qsw typ. (nC) |
28 |
5.5 |
||
Output charge Qoss typ. (nC) |
90 |
16.5 |
||
Input capacitance Ciss typ. (pF) |
5870 |
1020 |
||
Packages |
Name |
SOP Advance |
TSON Advance |
|
Size typ. (mm) |
5.0×6.0 |
3.3×3.3 |
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Stock Check & Purchase |
Notes:
[1] Total gate charge (gate-source plus gate-drain), gate switch charge, output charge
[2] Compared with TPH4R008NH (U-MOS VIII-H series), TPH2R408QM has improved its drain-source On-resistance x total gate charge by approximately 15%, drain-source On-resistance x gate switch charge by approximately 10%, and drain-source On-resistance x output charge by approximately 31%.
[3] As of March 30, 2020, Toshiba survey.
Follow the links below for more on the new products.