Optimal power efficiency using the latest technology sets a new industry standard for high power density applications

SUNNYVALE, Calif. — (BUSINESS WIRE) — June 27, 2018 — Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer and global supplier of a broad range of power semiconductors and power ICs, introduced today the AONX38168, which utilizes the latest 25V N-Channel MOSFET Technology. The XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package, (5mm x 6mm outline) ideal for synchronous DC/DC converter applications.

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Next Generation 25V Technology: AONX38168 (Graphic: Business Wire)

The AONX38168 is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. The new device offers a higher power density comparative to existing solutions, and is well suited for server and telecommunication markets. The AONX38168 is the newest generation of XSPairFETs, offering the lowest on-state resistance and best Figure of Merits (Rdson x Qg). The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI.

“With the significant performance improvement, the AONX38168 allows new designs to operate at higher switching frequencies. In addition, AOS can offer a complete solution with Digital Power and Power IC products for DC/DC voltage regulation for demanding applications in server and telecommunications,” said Peter H. Wilson, Marketing Director of MOSFET product line at AOS.