-- Reduced on-resistance from use of a small low-resistance package
TOKYO — (BUSINESS WIRE) — April 11, 2018 — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released two new MOSFETs “TPHR7904PB” and “TPH1R104PB” housed in the small low-resistance SOP Advance (WF) package, as new additions to the automotive 40V N-channel power MOSFET series. Mass production starts today.
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Toshiba: Automotive 40V N-channel power MOSFET "TPHR7904PB" and "TPH1R104PB" housed in the small low-resistance SOP Advance (WF) package. (Photo: Business Wire)
Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide low on-resistance and thus help reduce conduction loss. The U-MOS IX-H design also lowers switching noise compared with Toshiba’s previous design (U-MOS IV), helping to reduce EMI (Electromagnetic Interference).
The SOP Advance (WF) package adopts a wettable flank terminal structure, which enables AOI (Automated Optical Inspection) after soldering.
Applications
- Electric power steering (EPS)
- Load switches
- Electric pumps
Features
- Provides a maximum on-resistance, RDS(ON)max, of 0.79 mΩ from the use of the U-MOS IX-H process and the SOP Advance(WF) package.
- Low-noise characteristics reduce electromagnetic interference (EMI).
- Available in a small low-resistance package with a wettable flank terminal structure.
Main Specifications |
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(Unless otherwise specified, @Ta=25°C) |
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Part Number |
Drain-Source
|
Drain
|
Drain-Source
RDS(ON) max.(mΩ) |
Built-in
|
Series | |||||||
@V GS =6V |
@V GS =10V |
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TPH1R104PB | 40 | 120 | 1.96 | 1.14 | No | U-MOS IX | ||||||
TPHR7904PB | 150 | 1.3 | 0.79 | No | U-MOS IX | |||||||