These solutions are available in a range of architectures that include:
- Low Voltage, Low Leakage, Low Power Family (LV)
- Ultra Low Leakage, Low Power SRAM (ULL) Single Supply 0.8v Nominal
- Ultra High Speed SRAM (UHS) up to 1.5GHz
Using voltage level translations, integrated power switches and Mobile Semiconductor's proprietary ultra low leakage retention mode, the 28nm HPC+ compilers utilizes the high density ULL bit cell to give the end users the ideal solutions for low power applications.
"Building upon our success in a series of industry leading memory compilers," Founder and CEO Cameron Fisher said, "we are confident that our new 28nm compliers will enable a wide range of new designs in the exploding IoT market space."
Fisher continued, "Mobile Semiconductor is the leader in providing low power solutions and the low power compilers supports a deep sleep mode that allows many years of operation on a simple button cell battery."
For more information please contact Mobile Semiconductor at info@mobile-semi.com
About Mobile Semiconductor:
Mobile Semiconductor is located in Seattle, Washington with a design center in Williston, Vermont. The company develops SRAM, ROM and Register File compilers optimized for applications requiring ultra-low power, low leakage or ultra-high performance.
Mobile Semiconductor's customers differentiate their products by using our application-optimized SRAMs to meet their high performance and ultra-low power product requirements. www.Mobile-semi.com
View original content: http://www.prnewswire.com/news-releases/mobile-semiconductor-introduces-28nm-memory-compiler-support-300612654.html
SOURCE Mobile Semiconductor
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Company Name: Mobile Semiconductor
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