TOKYO — (BUSINESS WIRE) — January 28, 2018 — Toshiba Electronic Devices & Storage Corporation today announced the launch of “SSM6N357R,” a new MOSFET with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.
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Toshiba Electronic Devices & Storage Corp.: "SSM6N357R," a small dual MOSFET for relay drivers. (Photo: Business Wire)
SSM6N357R integrates a pull-down resistor, a series resistor and a Zener diode, which reduces the parts count and save on board space. Furthermore, since it is a dual-type package product (2 in 1), it has an approximately 42% smaller mounting area than the alternative of using two SSM3K357R (2.4 x 2.9 x 0.8 mm) single-type package products.
An industry-standard TSOP6F-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM6N357R suitable for automotive and many other applications.
Applications
- Relay and solenoid control for automotive applications
- Relay and solenoid control for industrial applications
- Clutch control for OA equipment
Features
- Reduced board space and part count (pull-down resistor, series resistor and Zener diode integrated.)
- Low operating voltage of 3.0 V
- Dual package (2 in 1)
- AEC-Q101 qualified
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Main Specifications |
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(Ta=25°C) |
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| Items | Characteristics | |||||
| Absolute maximum ratings |
Drain-source voltage
VDSS (V) |
60 | ||||
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Gate-source voltage
VGSS (V) |
±12 | |||||
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Drain current
ID (A) |
0.65 | |||||
| Electrical Characteristics |
Drain-source on-resistance
R DS(ON) max (mΩ) |
|V GS |=3.0V | 2400 | |||
| |V GS |=5.0V | 1800 | |||||
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Total gate charge
Q g typ. (nC) |
1.5 | |||||
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Input capacitance
C iss typ. (pF) |
43 | |||||
| Package | TSOP6F | 2.9mm×2.8mm; t=0.8mm | ||||
