Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series

TOKYO — (BUSINESS WIRE) — December 18, 2017 — Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

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Toshiba Electronic Devices & Storage Corporation:100V N-channel power MOSFETs "TPH3R70APL" for industrial applications. (Photo: Business Wire)

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance^[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “R_DS(ON) × Q_oss”, On-resistance times output charge, and “R_DS(ON) × Q_SW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications^[2].

Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.

Applications

- Power supplies for industrial equipment
- Motor control equipment

Features

- Industry’s lowest-in-class On-resistance^[1]
R_DS(ON) = 3.7mΩ (max) @ V_GS = 10V (TPH3R70APL)
R_DS(ON) = 11.5mΩ (max) @ V_GS = 10V (TPN1200APL)
- Low output charge and low gate switch charge
- Allows 4.5V logic level drive