SHANGHAI — (BUSINESS WIRE) — September 10, 2017 — Crossbar, Inc., the ReRAM technology leader, has been invited to take part in the 2017 SMIC Technology Symposium in Shanghai on September 13, 2017. Crossbar will present views on the current state of ReRAM technology and targeted applications for both embedded and stand-alone non-volatile memory products. Starting its commercialization phase, Crossbar, Inc. will demonstrate several ReRAM chips and development tools for high-capacity low-latency storage. Technical demos with ReRAM products showing massive battery energy savings for IoT and wearables applications will be showcased by Crossbar.
Crossbar will also speak at the Symposium:
Who: Sylvain Dubois, vice-president of Business Development &
Marketing of Crossbar
What: ReRAM as eNVM of choice for 40nm
and below
When: September 13, 2017, 4:20 p.m.
Where:
Shanghai Hall, Kerry Hotel Pudong, Shanghai
About Crossbar, Inc.
Crossbar is the leader in ReRAM technology, enabling kilobytes to terabytes of always-on data storage to be embedded into any processor, microcontroller, FPGA or as a standalone memory chip. Crossbar ReRAM lets designers rethink the compute/storage paradigm, free from the constraints of traditional flash and DRAM memories. From “persistent memory” that brings data closer to CPU to “cognitive memory” that enables in-memory computing without a host CPU, ReRAM is ushering in a new era of data storage and processing for both edge and cloud computing. For more information, visit crossbar-inc.com.
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Contact:
Tanis Communications, Inc.
Nicole Conley, +1 650-422-3156
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