Analog Devices Expands GaN Power Amplifier Portfolio with Two Broadband 6-GHz Modules

NORWOOD, Mass. — (BUSINESS WIRE) — April 6, 2017Analog Devices, Inc. today announced a pair of high-performance gallium nitride (GaN) power amplifier (PA) modules which offer one of the highest power-density levels in their class, thus minimizing size and weight of the subsystem. The HMC7885 and HMC7748 broadband modules target applications operating between 2 GHz and 6 GHz, including test and measurement, communications, Traveling Wave Tube (TWT) replacement, military/aerospace surveillance and countermeasures, and radar. The fully integrated, all solid-state devices expand ADI's existing line of GaN-based PAs, and feature ease of use to accelerate prototyping and system design.

This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20170406005571/en/

Analog Devices Expands GaN Power Amplifier Portfolio with Two Broadband 6-GHz Modules (Photo: Busine ...

Analog Devices Expands GaN Power Amplifier Portfolio with Two Broadband 6-GHz Modules (Photo: Business Wire)

The HMC7885 is a 32-W, hermetically sealed, hybrid amplifier housed in a hermetic flange-mount package for high-reliability applications. This hybrid amplifier typically provides 21 dB of small-signal gain and 45 dBm of saturated RF-output power. The device draws 2.2 A of quiescent current from a 28-V dc supply. Both RF input and output are DC blocked and matched to 50 ohms for ease of use. An evaluation board is available with layout and bill of materials to facilitate design-in and user application.

The HMC7748 is a fully integrated multistage Power Amplifier Module which delivers 25 W of saturated output power, accepts inputs up to −8 dBm maximum, and provides small-signal gain of 60 dB. It includes bias sequencing and regulation, and is also internally matched to 50 ohms. This PA draws 0.7 A from a 12-V supply and up to 4 A from a 28-V supply. It includes an enable pin to provide shutdown capability so the amplifier can be turned on and off without cycling the power supplies.

These GaN power amplifiers provide significant advances in performance and packaging, for broadband, medium-power applications up to 6 GHz – all of which make for a critical combination with today's size, weight, and power (SWaP)

Product Availability and Packaging

Product     Temperature

Range

    Full Production     Packaging
HMC7885     −30⁰C to +60⁰C     Now    

18-Lead Hermetic,

Ceramic/Metal Multichip Module, 1" × 1.4" × 0.15"
high (approx.)

HMC7748     −40°C to +70°C     Now     6-Lead Module

with Connector Interface,

3.75" × 3" × 0.6" high (approx.)


1 | 2  Next Page »
Featured Video
Jobs
Senior Firmware Architect - Server Manageability for Nvidia at Santa Clara, California
Design Verification Engineer for Blockwork IT at Milpitas, California
CAD Engineer for Nvidia at Santa Clara, California
GPU Design Verification Engineer for AMD at Santa Clara, California
Senior Platform Software Engineer, AI Server - GPU for Nvidia at Santa Clara, California
Sr. Silicon Design Engineer for AMD at Santa Clara, California
Upcoming Events
Phil Kaufman Award Ceremony and Banquet to be held November 6 at Hayes Mansion at Hayes Mansion 200 Edenvale Ave San Jose CA - Nov 6, 2024
SEMICON Europa 2024 at Messe München München Germany - Nov 12 - 15, 2024
DVCon Europe 2023 at Holiday Inn Munich – City Centre Munich Germany - Nov 14 - 15, 2024
SEMI MEMS & Imaging Sensors Summit, at International Conference Center Munich Germany - Nov 14, 2024



© 2024 Internet Business Systems, Inc.
670 Aberdeen Way, Milpitas, CA 95035
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise