Produced by industry experts, EPC has posted a nine-part educational video series on design basics, DC-DC conversion, wireless charging, reliability, and other applications for gallium nitride FETs and integrated circuits.
EL SEGUNDO, Calif. — (BUSINESS WIRE) — January 22, 2016 — Efficient Power Conversion Corporation ( www.epc-co.com) has expanded its video library on GaN technology with the addition of a nine-part educational video series designed to provide power system design engineers advanced technical information and application examples on how to design more efficient power conversion systems using gallium nitride-based transistors and integrated circuits.
Beyond giving the design basics for using GaN transistors and reliability information, this video series provides direction on converting development boards into working prototypes. Further, the series offers practical examples on the use of GaN transistors in widely used power electronics applications such as DC-DC conversion for telecom and datacom systems, as well as two videos on the use of GaN devices in wireless charging systems.
Gallium Nitride (GaN) Advanced Learning Video Series:
GAL01:
What is GaN?
GaN has emerged as a displacement
technology to silicon solutions. GaN’s superior performance can be
implemented at the price of silicon, which makes it ideal for power
conversion system.
GAL02:
Design Basics
Gate drive requirements for use with eGaN®
FET and current power conversion circuit designs.
GAL03:
GaN is Reliable
EPC reliability testing has demonstrated
that GaN technology is ready for commercial use and this video describes
the reliability tests and the results achieved.
GAL04:
500 W Isolated DC-DC Converter with GaN – The Power of a Quarter
Brick in the Size of an Eight Brick
Presentation of a fully
regulated, fully isolated 500 W 1/8th brick using eGaN
transistors enabling a 60% increase in power in the industry standard
DOSA footprint.
GAL05:
Cut the Cord! Wireless Power with GaN
Demonstrations of
the benefits of GaN technology in resonant wireless power transfer
systems. Both AirFuel™ Alliance’s class 2 and class 3 system designs are
showcased as examples.
GAL06:
eGaN® IC’s – Integrate for Even
Higher Efficiency in Wireless Power and DC-DC Conversion
Integration
further widens the efficiency gap between eGaN technology and
traditional silicon. Integrated devices save space, improve efficiency,
and lower system costs.
GAL07:
Increase Power Density with GaN
Discussion of
techniques, including thermal management, for obtaining the most benefit
from using GaN technology in power conversion applications.
GAL08:
How to Turn a Development Board into a Working Prototype
A
practical guide on turning a standard EPC half-bridge development board
into a working prototype system.
GAL09:
Where is GaN Going?
In this video CEO and Co-founder,
Alex Lidow, discusses the wide variety of applications enabled by GaN
technology that are “changing the way we live.” Emerging applications
such as autonomous vehicles, wireless power transfer, augmented reality,
and envelope tracking take advantage of this game changing technology.
“This series of short, less than ten-minute each, videos will assist designers of power conversion systems increase their understanding of state of the art in power conversion as well as the role played by GaN technology. These videos will accelerate their learning curve and increase their ability to take maximum advantage of the high switching frequency and high performance of GaN power transistors,” noted Alex Lidow, CEO and co-founder of EPC.
Available on Line
This new GaN Advanced Learning video series is easily accessible on the EPC video library or on the EPC YouTube Video Channel.
About EPC
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as
DC-DC
converters,
wireless
power transfer,
envelope
tracking, RF transmission,
power
inverters,
remote
sensing technology (LiDAR) , and
class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs.
