MACOM Extends Industry Leading GaN Portfolio with New 15 W GaN on SiC Pulsed Power Transistor

Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC-3.5 GHz

LOWELL, Mass. — (BUSINESS WIRE) — August 25, 2014 — M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced a new GaN on SiC HEMT Pulsed Power Transistor for civilian and military radar pulsed applications.

The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficienc ...

The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. This high performance transistor is assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. (Photo: Business Wire)

The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. These high performance transistors are assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.

“The new 15 W peak GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range,” said Paul Beasly, Product Manager. “The device is an ideal driver stage for MACOM’s higher power GaN transistors for L-Band and S-Band pulsed radar applications.”

Operating between the DC-3.5 GHz frequency range, the devices are highly robust transistors with high voltage breakdowns and boast a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance.

The table below outlines typical performance for the 1.2-1.4 GHz frequency band.

Parameters             Units            

MAGX-000035-015000/S

Frequency             GHz             DC-3.5

P out

            W             17.7
Power Gain             dB             15.5
Drain Efficiency             %             63
Droop             dB             0.1
Load Mismatch Stability             VSWR-S             5:1
Load Mismatch Tolerance             VSWR-T             10:1

1 | 2  Next Page »
Featured Video
Jobs
Senior Platform Software Engineer, AI Server - GPU for Nvidia at Santa Clara, California
GPU Design Verification Engineer for AMD at Santa Clara, California
Sr. Silicon Design Engineer for AMD at Santa Clara, California
CAD Engineer for Nvidia at Santa Clara, California
Design Verification Engineer for Blockwork IT at Milpitas, California
Senior Firmware Architect - Server Manageability for Nvidia at Santa Clara, California
Upcoming Events
SEMICON Japan 2024 at Tokyo Big Sight Tokyo Japan - Dec 11 - 13, 2024
PDF Solutions AI Executive Conference at St. Regis Hotel San Francisco - Dec 12, 2024
DVCon U.S. 2025 at United States - Feb 24 - 27, 2025



© 2024 Internet Business Systems, Inc.
670 Aberdeen Way, Milpitas, CA 95035
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering TechJobsCafe - Technical Jobs and Resumes GISCafe - Geographical Information Services  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise