Latest lineup adds "DPAK+" package product suited for high-speed switching
TOKYO — (BUSINESS WIRE) — January 25, 2013 — Toshiba Corporation (TOKYO:6502) has launched a low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as an addition to the MOSFET lineup for automotive applications. The new product, "TK100S04N1L", achieves low ON-resistance with a combination of the latest 8th generation trench MOS process "U-MOS VIII-H series" chip and the "DPAK+" package that utilizes Cu (copper) connectors. The product is primarily suited for automotive applications, especially for those demanding high-speed switching, such as motor drives and switching regulators. Samples are available now with mass production scheduled to start in March 2013.
Toshiba Low ON-Resistance Power MOSFET for Automotive Applications in a "DPAK+" Package (Photo: Business Wire)
| Polarity | Part number |
Drain-to-source voltage
|
Drain Current
|
Series | ||||
| Nch | TK100S04N1L | 40 | 100 | U-MOS VIII-H | ||||
| Key Features |
| 1. Low ON-resistance: RDS(ON) = 1.9mΩ (typ.) (VGS=10V) |
| 2. Low leakage current: IDSS=10μA (max) (VDS=rated voltage) |
| 3. "DPAK+" package that realizes low-ON-resistance by utilizing Cu connectors. |
| 4. Tch = 175°C guaranteed |
