Also achieves low leakage current and 175°C operation
TOKYO — (BUSINESS WIRE) — January 15, 2013 — Toshiba Corporation (TOKYO:6502) has launched a low ON-resistance power MOSFET as the latest addition to its TO-220SIS package series for automotive applications. The new product, "TK80A04K3L", also achieves low leakage current and guarantees operation at 175°C. While it is primarily suited to automotive applications, it can also be used in motor drives and switching regulators.
Toshiba low ON-resistance power MOSFET in TO-220SIS package for automotive applications (Photo: Business Wire)
| Polarity | Part number |
Drain-to-source voltage
|
Drain Current
|
Series | ||||
| Nch | TK80A04K3L | 40 | 80 | U-MOS IV | ||||
| Key Features | ||
| 1. | Low ON-resistance (VGS=10V) | |
| RDS(ON) = 1.9mΩ(typ.) | ||
| 2. | Low leakage current IDSS=10μA(max) (VDS=rated voltage) | |
| 3. | Tch = 175°C guaranteed | |
| 4. | Lead-insertion type TO-220SIS package | |
