From a given technological node to the next, parameter dispersion (due to process
variations) and optical distortions (from layout to lithography) are strongly increasing. These phenomena, together with the ever increasing IC complexity, are impacting on yield and reliability. A methodology has to be defined to improve them for a nanometer scale process. To achieve that, an efficient prediction and monitoring of the IC performances has
to be performed.
You are reviewing the
Download.
Your machine is locate at 18.117.151.198.
