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Title : Thermal Properties and Reliability of GaN Microelectronics
Company : Gradient Design Automation Inc.
Date : 26-Jul-2011
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We review our latest developments in the field of Raman thermography and its application to GaN microelectronics. Device self-heating, the temperature rise in a device generated by electrical power dissipation, plays an important role for device performance and reliability, however, is difficult to assess as it occurs on sub-micrometer length scales in most devices, not observable using traditional thermography techniques.
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