NXP Introduces New High Power RF Products for 5G Networks
[ Back ]   [ More News ]   [ Home ]
NXP Introduces New High Power RF Products for 5G Networks

PHILADELPHIA, June 12, 2018 (GLOBE NEWSWIRE) -- ( IMS 2018) – Semiconductors N.V. (NASDAQ:NXPI) is driving innovation with its expanded cellular infrastructure portfolio of GaN and silicon laterally diffused metal oxide semiconductor (Si-LDMOS) products that deliver industry leading performance in a compact footprint to enable next-generation 5G cellular networks.

Gallium Nitride Chip Trio
NXP Semiconductors is driving innovation with expanded cellular infrastructure portfolio of GaN and silicon laterally diffused metal oxide semiconductor (Si-LDMOS) products that deliver industry leading performance in a compact footprint to enable next-generation 5G cellular networks.


NXP Semiconductors Powers 5G Communications
NXP Semiconductors Powers 5G Communications


NXP Semiconductors Powers 5G Infrastructure
NXP Semiconductors Powers 5G Infrastructure


Spectrum expansion, higher order modulation, carrier aggregation, full dimension beam forming, and other enablers of 5G connectivity will require an expanded base of technologies to support enhanced mobile broadband connectivity. With spectrum usage and network footprints, multiple-input, multiple output (MIMO) technologies from four transmit (4TX) antennas to 64 TX and higher will be employed. The future of 5G networks will depend on GaN and Si-LDMOS technologies and NXP is at the forefront in its RF power amplifier development.

“Building on the success of 25 years of LDMOS leadership — NXP released the world’s first LDMOS product in 1992 — today, we are extending our RF leadership with industry leading GaN technology, developed with the highest linear efficiency for cellular applications,” said Paul Hart, senior vice president and general manager of NXP’s RF Power business. “Backed with the best supply chain, global applications support and unparalleled design expertise in the industry, NXP is positioned to be the leading RF partner for 5G solutions.” 

At IMS 2018, NXP is introducing new RF GaN wideband power transistors and expanding its Airfast third-generation Si-LDMOS portfolio of macro and outdoor small cell solutions. The new offerings include:

The breadth of the company’s RF Power technologies—which include GaN, silicon-LDMOS, SiGe, and GaAs—allows product options for 5G that span frequency and power spectrums with varying levels of integration. This wide array of options, combined with the products that NXP builds for digital computing, and baseband processing, makes NXP a unique supplier of end-to-end 5G solutions.

To learn more, visit NXP at the International Microwave Symposium (IMS 2018) June 10-15 at booth #739 or at www.nxp.com/RF

About NXP Semiconductors
NXP Semiconductors N.V. (NASDAQ:NXPI) enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security & privacy and smart connected solutions markets. Built on more than 60 years of combined experience and expertise, the company has 30,000 employees in more than 30 countries and posted revenue of $9.26 billion in 2017. Find out more at www.nxp.com.

NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. All rights reserved. © 2018 NXP B.V.

For more information, please contact: 

AmericasEuropeGreater China / Asia
   
Jacey Zuniga
Tel: +1 512-895-7398
Email: jacey.zuniga@nxp.com
Martijn van der Linden
Tel: +31 6 10914896
Email: martijn.van.der.linden@nxp.com
Esther Chang
Tel: +886 2 8170 9990
Email: esther.chang@nxp.com

Photos accompanying this announcement are available at:
http://www.globenewswire.com/NewsRoom/AttachmentNg/70f4abfc-897f-4faf-a4c4-68b1d394d75b
http://www.globenewswire.com/NewsRoom/AttachmentNg/78f4e586-76ca-4631-a2b2-41d148943491
http://www.globenewswire.com/NewsRoom/AttachmentNg/4c2451f7-df43-4cf9-998f-7690baa0fa99

Primary Logo