SUNNYVALE, Calif., May 19 /PRNewswire/ -- Fujitsu Microelectronics America, Inc. (FMA) today introduced two consumer FCRAM memory ICs with the world's first operating temperature range extended to 125 degree C with DDR SDRAM interfaces. The new, low-power memory ICs are optimized for use in System-in-Packages (SiP) in consumer products such as digital TVs and digital video cameras. Samples of the Fujitsu 512Mbit MB81EDS516545 and 256Mbit MB81EDS256545 FCRAMs are available now.
"Customers using the new FCRAM ICs combined with a System-on-Chip (SoC) in the SiP configuration will achieve optimal performance even as the temperature of the SiP rises with the increase in operating speed," said Tong Swan Pang, senior marketing manager, Fujitsu Microelectronics. "Today's digital consumer products continue to demand higher performance, higher speeds and lower costs. SiPs that combine a memory chip with the SoC meet these requirements, and reduce the number of components and board space, helping lower system costs. Where rapid and flexible design is a key factor for success in the consumer electronics market, SiPs integrate high-speed memory and simplify design," he added.
Conventional memory has limited SiP usage because power consumption drives up temperatures. For example, a high-performance SoC can operate up to a maximum of 125 degree C, but the SiP becomes inoperable at much lower temperatures because memory has a lower temperature tolerance. One way to make SiPs viable with conventional memory is to add a heat disperser such as a heat sink to reduce temperatures to within operational range. But this solution increases both cost and footprint.
The Fujitsu 512Mbit and 256Mbit consumer FCRAM ICs feature a maximum operating temperature of 125 degree C. Using the new FCRAMs, the SiP operates to specification even when it is used with a SoC featuring high power consumption - with no need to add a heat sink. (See Illustration of SiP with conventional memory compared with the SiP with a 125 degree C-rated FCRAM, http://www.fujitsu.com/downloads/MICRO/fma/pdf/FCRAM_SiP_Example.pdf)
The new FCRAMs also can provide data-transfer rates more than twice the rate of the conventional DDR SDRAM memory, while keeping power consumption low. The 512Mbit FCRAM can reduce power consumption by up to 50 percent compared to the equivalent conventional DDR2 SDRAM memory. As result, these FCRAMs contribute to a 50 percent reduction of CO2 emissions that typically emanate from the memory in digital consumer products.
Fujitsu Microelectronics will continue to develop products with the necessary performance and functionality for SiPs to provide solutions with optimal value and cost for digital consumer products.
Pricing and Availability
Samples of the 512Mbit MB81EDS516545 and 256Mbit MB81EDS256545 are available now. Pricing is available upon request.
About Fujitsu Microelectronics America, Inc.
Fujitsu Microelectronics America, Inc. (FMA) leads the industry in innovation. FMA provides high-quality, reliable semiconductor products and services for the wireless, automotive, consumer, and other markets throughout North and South America. For more product information, please visit the company's web site at http://us.fujitsu.com/micro/fcram or address e-mail to Email Contact.
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Key Product Features
1. World's first operation up to 125 degree C
These new FCRAMs have a maximum operating temperature of 125 degree C,
greatly increasing the allowable power consumption within the system.
Previous SiP solutions were characterized by overheating due to the
combination of SoCs with high power and memory requirements. Also, the
new FCRAMs allow the use of low-cost packaging that doesn't need high-
temperature specifications.
2. Low-power consumption
The bus width has been expanded to 64 bits and the operating frequency has
been reduced compared to previous products. Also, there is no need for
terminating resistors, which are attached at the termination of a circuit
wiring or a signal to prevent interference due to signal reflection. As
a result, the power consumption of these new FCRAMs can be cut up to half
compared with the equivalent system of two conventional DDR2 SDRAM memory
ICs with 16-bit bus width. The new FCRAM also helps reduce memory-induced
CO2 emissions from consumer products by about 50 percent.
3. High-data bandwidth
For operating temperatures of 125 degree C, by having a 64bit bus width
and a maximum operating frequency of 200MHz, these new FCRAMs can provide
a data transfer rate of 3.2Gbyte/second. That is two times the data rate
of conventional DDR2 SDRAM memory. For operating temperatures of 105
degree C and below, with an operating frequency of 216MHz, the data
transfer rate increases to 3.46Gbyte/second.
Key Specifications of the 512Mbit FCRAM, MB81EDS516545
Memory Configuration 2M word x 64bit x 4 banks
Voltage 1.7 ~ 1.9V
Interface Low Power DDR SDRAM (CMOS)
Operating Temperature Range -10 ~ +125 degree C
(junction temperature)
Burst Operating Frequency Up to 105 degree C 216MHz (max)
Up to 125 degree C 200MHz (max)
Data Transfer Rate Up to 105 degree C 3.46Gbyte/sec (max)
Up to 125 degree C 3.2Gbyte/sec (max)
Key Specifications of the 256Mbit FCRAM, MB81EDS256545
Memory Configuration 1M word x 64bit x 4 banks
Voltage 1.7 ~ 1.95V
Interface Low Power DDR SDRAM (CMOS)
Operating Temperature Range -10 ~ +125 degree C
(junction temperature)
Burst Operating Frequency Up to 105 degree C 216MHz (max)
Up to 125 degree C 200MHz (max)
Data Transfer Rate Up to 105 degree C 3.46Gbyte/sec (max)
Up to 125 degree C 3.2Gbyte/sec (max)
Web site: http://www.fma.fujitsu.com/