In typical applications, the MOSFETs are used in tandem to amplify, to the nominal power level needed for driving the transmission antenna and audio signals that have converted to the high frequencies of the wireless network. They are suitable for frequencies in the 175MHz and 500MHz bands for commercial wireless systems, and in the 800MHz and 900MHz bands for cell phones.
Compared to previous-generation power MOSFETs, the RQA0010 and RQA0014 have the greater efficiency and higher output at low-voltage operation that are essential for decreasing power consumption and thus extending battery life in portable wireless products. By using with a new fabrication process, Renesas has achieved a 60 percent power-added efficiency (PAE) in the RQA0010 MOSFET at 3.6V, and a 55 percent PAE in the RQA0014 MOSFET at the same supply voltage. As a result, a two-stage amplifier that uses an RQA0010 to boost the output of an RQA0014, achieves the industry's highest level of performance: a 1.2W output at 3.6V.
The high-frequency power MOSFETs have been subjected to ESD immunity testing that simulates the electrostatic discharges that could occur in actual use from a person or metal object, as required by the IEC61000-4-2 standard. The transistors have an internal structure that provides maximum protection in the areas of the chip where damage typically occurs. Careful design and fabrication have resulted in successful ESD immunity level 4 (14kV) testing, verifying MOSFET performance that promotes high reliability in wireless products, where contact with human bodies is a basic aspect of normal operation.
The package used for the RQA0010 and RQA0014 MOSFETs is the proven Renesas UPAK (Renesas package code) miniature package that measures only 4.5 × 2.5 × 1.5mm (max). It facilitates miniaturization and thinner form factors in compact handheld wireless products. The UPAK is a source-flange type package that combines electrical grounding with high thermal dissipation. It’s also environmentally friendly, being completely lead-free.
Price and Availability
| Product Name |
Package (Renesas package code) |
Sample Price/Availability |
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| RQA0010 | UPAK | $0.30/Q3 2008 | ||
| RQA0014 | UPAK | $0.19/Q3 2008 |
About Renesas Technology Corp.
Renesas Technology Corp. is one of the world's leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets and the world's No.1 supplier of microcontrollers. It is also a leading provider of LCD Driver ICs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC), System-in-Package (SiP) and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TOKYO:6501)(NYSE:HIT) and Mitsubishi Electric Corporation (TOKYO:6503), Renesas Technology achieved consolidated revenue of 951billion JPY in FY2007 (end of March 2008). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in 17 countries with 26,800 employees worldwide. For further information, please visit http://www.renesas.com
Notes: 1. ESD immunity level — A test that verifies that a static aerial discharge applied to the antenna of a wireless device does not affect the device. During the test, equipment simulates and applies electrostatic discharges that actually could occur from a person or metal object, as required by the IEC61000-4-2 standard. The following discharge levels are stipulated by this standard. Level 1: 2kV, level 2: 4kV, level 3: 8kV, level 4: 15kV.
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Specifications (at 25°C) — Renesas Technology High-frequency Power MOSFETs for Transmitter Amplifiers in Portable Wireless Devices |
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Product Name |
Maximum ratings |
AC characteristics | (Test conditions) | |||||||
| VDSS | ID |
Output power (Pout) |
Power-added efficiency (PAE) |
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| RQA0010 | 16V | 1.2A |
30 dBm [1W equivalent] |
60% |
VCC = 3.6V, f = 450MHz Pin = 20 dBm |
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| RQA0014 | 16V | 0.3A |
24 dBm [0.25W equivalent] |
55% |
VCC = 3.6V, f = 450MHz Pin = 10 dBm |
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Contact:
Renesas Technology America, Inc.
Akiko Ishiyama, 408-382-7407
Email Contact