New MOSFET Family Achieves Low RDSON and Fast Switching for Significant Improvement in Power Efficiency
The UMOS-V process improves many of the key parameters required for better power efficiency in both the high- and low-side MOSFETs in a synchronous DC-DC converter. For the low-side MOSFET, these include lower on-state resistance (RDS(on)) and reduced self-turn-on loss, achieved through lower gate-to-drain capacitance, lower gate resistance (R(g)), and optimized gate threshold voltage. On the high-side MOSFET, the new process technology enables faster switching, achieved through lower gate charge (Q(sw)) and lower gate resistance.
"TAEC has started to provide samples of these new UMOS-V MOSFETs to select power supply customers. We have received very favorable feedback based on their initial performance evaluations," said Ajay Chinai, business development manager, Discrete Power Products, for TAEC.
Eleven initial members of the Toshiba UMOS-V family are offered in four packages, SOP Advance, SOP-8, TSSOP Advance and PS-8, providing a range of size and performance to meet various application requirements. Four 30 volt (V) n-channel single MOSFETs with RDSon ratings ranging from 3.1milliohms to 9milliohms, max. at 10V, comprise the initial offering in Toshiba SOP Advance packages, which feature a 41 percent lower profile than standard SOP-8 packages, and enable approximately 47 percent higher power dissipation. For designers who require a standard SOP-8 package, the new lineup also includes four 30V n-channel single MOSFETs with RDSon ratings ranging from 3.1milliohms to 9milliohms, max. at 10V. In addition, two 30V n-channel single MOSFETs with RDSon ratings of 9milliohms and 11milliohms, max. at 10V, are offered in compact Toshiba TSSOP packages, measuring 3.9mm x 4.65mm x 0.75mm, and an initial 30V device in a PS-8 package, measuring 2.8mm x 2.9mm x .8mm, with RDSon of 5.7 milliohms rounds out the lineup. Additional UMOS-V MOSFETs are planned with higher voltage ratings, as well as p-channel, dual-channel and MOSBD configurations.
UMOS-V Overview
UMOS-V is a fifth generation process technology in the Toshiba fast switching series. With a higher cell density than that of the previous generation, UMOS-V uses trench cell structure MOSFET technology and is designed primarily for synchronous rectification of DC-DC converters.
Pricing and Availability
Samples of the first eleven devices in the Toshiba UMOS-V MOSFET family are scheduled for availability in March 2007, ranging in price from $0.60 to $0.90. Production quantities are scheduled for availability in second quarter, 2007.
Toshiba UMOS-V Power MOSFETs
Part Number Drain Pack- Type RDS(on)(max.) C(rss) C(iss)
Source age (milliohms) (pF) (pF)
Voltage
(max.) 4.5V 10V V(ds)=10V,
V(gs)=0V, f=1MHz
V(dss)(V)
TPC8031-H 30 SOP-8 N-ch (13.1) (9.0) 73 1165
TPC8032-H 30 5.5mm x single (8.3) (5.7) 125 1897
TPC8033-H 30 6.0mm x (6.5) (4.5) 170 2475
TPC8034-H 30 1.5mm (4.1) (3.1) 294 4100
TPCA8023-H 30 SOP (13.1) (9.0) 73 1165
TPCA8018-H 30 Advance (8.3) (5.7) 125 1897
TPCA8012-H 30 5.5mm x (6.5) (4.5) 170 2475
TPCA8019-H 30 6.0mm x
TPCM8002-H 30 0.95mm 4.1 3.1 294 4100
TPCM8003-H 30 TSSOP (8.3) (5.7) 125 1130
Advance (13.4) (9.0) 73 1165
TPCP8005-H 30 PS-8 (15.7) (12.1) 73 1165
Toshiba's Discrete Products
Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier and moved into fourth place in overall semiconductor sales. (Source: "2005 Worldwide Semiconductor Market Share Report," Gartner, released April 2006). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.
*About TAEC
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Email Contact. Photo available for download at http://www.toshiba.com/taec/news/press_releases/2006/powr_07_465.jsp
Information in this press release, including product pricing and specifications, content of services and contact information, is current on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://www.chips.toshiba.com, or from your TAEC representative.
POWR 07 465
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