Broad S-MOS Family Suitable for Switching Applications or DC-DC Converters in Cellular Phones, Digital Cameras and other Mobile Electronic Devices
Developed by Toshiba Corp. (Toshiba), the S-MOS family includes 17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5 Amp (A) to 2.5A load switching applications and DC-DC converters operating at 0.5 megahertz(1) (MHz) to 1MHz, and 20 three-pin devices (SSM3K- and SSM3J-) that are suitable for 0.5A to 4.0A switching devices. The six-pin devices, with ON-resistance from 30 milliohms to 400 milliohms, are available in an ultra-small 1.6mm x 1.6mm x 0.55mm package (ES6). The three-pin devices feature ON-resistance from 100 milliohms to 400 milliohms and are offered in a 2.8mm x 2.9mm x 0.7mm package (TSM). N- and P-channel polarities are available in either package, designated by K or J, respectively, in the part number. (See table below.)
To support a wide range of design requirements, the six-pin S-MOS family includes N-channel devices with drain source voltage of 20V or 30V and driving voltage of 1.8V, 2.5V or 4V, and P-channel devices with -12V, -20V or -30V drain source voltage, and driving voltage of 1.5V, 1.8V, 2.5V or 4V. The three-pin S-MOS family includes N-channel devices with drain source voltage of 20V, 30V or 60V, and driving voltage of 1.8V, 2.5V or 4V, and P-channel devices with -12V, -20V or -30V drain source voltage, and driving voltage of 1.8V, 2.5V or 4V.
"Advances in miniaturization of portable equipment are increasingly driving design decisions. At Toshiba, we are working to help our customers realize low capacitance and high speed switching, with lower operating voltages and smaller power losses, which translate into longer battery operation for their designs," said Homayoun Ghani, business development manager, microwave, RF and small-signal products, for TAEC.
Technical Specifications
Low ON-Resistance S-MOS (6-pin) in 1.6mm x 1.6mm Package (ES6)
Drain Gate
Source Source Drain ON-resistance Input
Voltage Voltage Current RDS(ON) max(milliohms) Capaci-
Part VDSS VGSS (max.) VGS= VGS= VGS= VGS= tance
Number Polarity (V) (V) Io (A) 1.5V 1.8V 2.5V 4.0V CiSS(pF)
SSM6K203FE N-ch 20 +/-10 2.9 155 108 78 63 400
SSM6K202FE N-ch 30 +/-12 2.3 -- 132 95 85 270
SSM6K204FE N-ch 20 +/-10 2.0 307 214 164 126 195
SSM6K208FE N-ch 30 +/-12 1.8 -- 276 185 140 125
SSM6K25FE N-ch 20 +/-12 0.5 -- 395 190 145 268
SSM6K24FE N-ch 30 +/-12 0.5 -- -- 180 145 245
SSM6K22FE N-ch 20 +/-12 1.4 -- -- 230 170 125
SSM6K209FE N-ch 30 +/-20 2.4 -- -- -- 152 320
SSM6K30FE N-ch 20 +/-20 1.2 -- -- -- 420 60
SSM6K31FE N-ch 20 +/-20 1.2 -- -- -- 540 36
SSM6J53FE P-ch -20 +/-8 -1.8 364 204 136 -- 568
SSM6J206FE P-ch -20 +/-8 -2.0 -- 320 186 130 335
SSM6J205FE P-ch -20 +/-8 -0.8 -- 460 306 234 250
SSM6J26FE P-ch -20 +/-8 -0.5 -- 980 330 230 250
SSM6J23FE P-ch -12 +/-8 -1.2 -- -- 210 160 420
SSM6J25FE P-ch -20 +/-12 -0.5 -- -- 430 260 218
SSM6J207FE P-ch -30 +/-8 -1.3 -- -- -- 491 137
Technical Specifications
Low ON-Resistance S-MOS (3-pin) 2.8mm x 2.9mm Package (TSM)
Drain Gate
Source Source Drain ON-resistance Input
Voltage Voltage Current RDS(ON) max(milliohms) Capaci-
Part VDSS VGSS (max.) VGS= VGS= VGS= VGS= tance
Number Polarity (V) (V) Io (A) 1.5V 1.8V 2.5V 4.0V CiSS(pF)
SSM3K310T N-ch 20 +/-10 5.0 66 43 32 28 1120
SSM3K309T N-ch 20 +/-12 4.7 -- 47 35 31 1020
SSM3K301T N-ch 20 +/-12 3.5 -- 110 74 56 320
SSM3K302T N-ch 30 +/-12 3.0 -- 131 87 71 270
SSM3K01T N-ch 30 +/-10 3.2 -- -- 150 120 152
SSM3K02T N-ch 30 +/-10 2.5 -- -- 250 200 115
SSM3K311T N-ch 30 +/-20 4.8 -- -- -- 43 910
SSM3K14T N-ch 30 +/-20 4.0 -- -- -- 67 460
SSM3K303T N-ch 30 +/-20 2.9 -- -- -- 120 180
SSM3K308T N-ch 60 +/-20 2.1 -- -- -- 181 248
SSM3K12T N-ch 30 +/-20 3.0 -- -- -- 175 120
SSM3J13T P-ch -12 +/-8 -3.0 -- -- 95 70 890
SSM3J312T P-ch -12 +/-8 -2.7 -- 237 142 91 550
SSM3J304T P-ch -20 +/-8 -2.3 -- 297 169 127 335
SSM3J313T P-ch -20 +/-8 -1.5 -- 614 354 290 174
SSM3J01T P-ch -30 +/-10 -1.7 -- -- 600 400 240
SSM3J02T P-ch -30 +/-10 -1.5 -- -- 700 500 150
SSM3J14T P-ch -30 +/-20 -2.7 -- -- -- 170 413
SSM3J306T P-ch -30 +/-20 -2.4 -- -- -- 225 280
SSM3J305T P-ch -30 +/-20 -1.7 -- -- -- 477 137
Pricing and Availability
Samples of the new Toshiba small signal MOSFETs are scheduled to be available in March 2007. These S-MOS devices range in price from $0.05 to $0.14 each in sample quantities.
Toshiba's Discrete Products
Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier and moved into fourth place in overall semiconductor sales. (Source: "2005 Worldwide Semiconductor Market Share Report," Gartner, released April 2006). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.
*About TAEC
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Email Contact.
Information in this press release, including product pricing and specifications, content of services and contact information, is current on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://www.chips.toshiba.com, or from your TAEC representative.
(1) For purposes of measuring frequency in this context, one Megahertz
(MHz) = 1,000,000 cycles per second.
Web site: http://www.chips.toshiba.com/