"There is no need to use cumbersome macro-models for LDMOS and high voltage MOS transistors," said Dr. Ivan Pesic, CEO of Simucad. "These compact models and our single-vendor circuit simulation environment provide unmatched accuracy, scalability, convergence and performance in designing power, power management and panel driver circuits."
The high voltage analog and RF IC design communities have been waiting for years for compact models that can accurately and efficiently simulate the behavior of LDMOS, VDMOS, EDMOS and other high voltage MOS transistors. The Simucad LDMOS and HV MOS models finally address these critical requirements.
The LDMOS and HV MOS models are accurate and scalable over a wide range of geometries, biases and temperatures using one single model card. They also provide accurate modeling of both symmetrical and asymmetrical, bias dependent parasitic effects.
Simucad Implementation of LDMOS Compact Model
Simucad LDMOS high-voltage compact model includes physical effects for both channel region and drift region under the gate and is suitable to simulate Lateral (LDMOS), Vertical Double-diffused (VDMOS) as well as Extended-drain (EDMOS) devices. This model accounts for the channel and drift regions, and computes the voltage at which the transition occurs internally. Simucad enhancements to the basic model improve accuracy, convergence and scalability of self-heating, quasi-saturation, and the capacitance model. The model was coded to be thread-safe in multi-processor operation and provides additional analyses for Transient Noise and RF noise analyses.
Simucad Implementation of HV MOS Compact Model
Simucad HV MOS high-voltage compact model is an extension of the industry-standard BSIM3v3 model. This model is suitable to simulate Vertical Double-diffused (VDMOS) and any other high-voltage MOS devices. The core parameter set is based on a final version of BSIM3v3 and ensures good continuity in the drain current equation and stable convergence. Simucad added additional parameters that are easily extracted by modeling engineers. These parameters account for bias dependency of asymmetric source and drain parasitics, mobility reduction due to drain voltage, dependency of velocity saturation on both gate and drain voltages and self-heating.
Availability and Pricing
These models are available for download on Simucad's customer website as part of its complete circuit simulation environment consisting of SmartSpice Analog Simulator, SmartSpiceRF Harmonic Balance-based RF Simulator, and Harmony Analog/Mixed-Signal Simulator. There is no additional fee for Simucad customers who have perpetual licenses under maintenance or have active time-based licenses. Simucad also provides turnkey SPICE model extraction services in its state-of-the-art laboratory.
About Simucad Design Automation
Simucad Design Automation is a leading provider of simulation and CAD software tools used for developing analog, mixed-signal, and RF integrated circuits. Founded in 2004 with assets from Simucad Inc. and Silvaco International, the company delivers proven products for circuit simulation, custom IC layout/verification, interconnect modeling, digital simulation, and IP characterization. The company integrates these best-in-class products with experienced support and engineering services to provide a complete PDK-based design flow with interfaces to leading third-party design platforms. Worldwide customers include leading fabless semiconductor companies, integrated device manufacturers, foundries, universities and designers of integrated circuits who require the utmost in accuracy, performance and value. For more information, call (408) 567-1000 or visit Simucad online at www.simucad.com.
For more information please contact: Kenneth Brock Vice President, Marketing Simucad Design Automation 408-654-4392 Email Contact