"As Pixim looked to enhance existing product lines and move into new digital imaging market segments, having access to MoSys 1T-SRAM products at the most advanced manufacturing processes stood out as a natural choice," commented Joe Montalbo, President and Chief Executive Officer at Pixim, Inc. "These high density memories, with their low-power consumption and flexible functionality will enable Pixim to leverage its core DPS technology and drive our expansion in areas such as video surveillance and automotive imaging, where we see tremendous potential for growth."
"MoSys' 1T-SRAM is the preferred high-density embedded memory technology for video and imaging applications and our successful partnership with Pixim is clear evidence of that," said Chet Silvestri, Chief Executive Officer of MoSys. "Moreover, MoSys strongly believes that by expanding access to 1T-SRAM products at 90nm technology Pixim can impact the digital imaging industry by offering optimized solutions with substantially higher-quality and significant cost effectiveness."
About Pixim Inc.
Pixim Inc. has developed imaging technology and products that revolutionize the way video cameras capture and process images. Pixim's patented Digital Pixel System(R) (DPS) silicon and software technology produces superior pictures under a wide variety of lighting conditions. For more information or to purchase Pixim's products, visit our website: www.pixim.com or call Pixim's headquarters in Mountain View, CA., (650) 605-1107.
About MoSys Inc.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 100 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
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